The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Feb. 23, 2021
Nikon Corporation, Tokyo, JP;
Yusuke Kawakami, Yohohama, JP;
NIKON CORPORATION, Tokyo, JP;
Abstract
Provided is a transistor production method including: forming a gate electrode on an object by using a conductive material; forming an insulating film on the gate electrode; forming a photoresponsive film on the insulating film by using a material containing a compound having a photoresponsive nitrobenzyl group; selectively exposing the photoresponsive film to dissociate the photoresponsive group in an exposed area, forming a pattern including a hydrophilic exposed area and a water-repellent unexposed area, disposing a conductive material in the exposed area to form a source electrode and a drain electrode, and forming a modified layer by subjecting the unexposed area to a plasma irradiation to remove a water-repellent film and further subjecting to a surface treatment; and forming a semiconductor layer on the modified layer.