The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Oct. 10, 2023
SK Hynix Inc., Icheon-si, KR;
Won Tae Koo, Icheon-si, KR;
Jae Gil Lee, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A method of manufacturing a semiconductor device comprises: providing a substrate; forming a ferroelectric layer on the substrate; stacking two-dimensional conductive metal-organic frameworks that include cavities on the ferroelectric layer to form a metal-organic framework layer, the cavities of the conductive metal-organic frameworks being disposed to overlap with each other in a thickness direction of the metal-organic framework layer; disposing metal particles within the overlapping cavities to form a charge trap layer; forming a gate insulation layer on the charge trap layer; and forming a gate electrode layer on the gate insulation layer.