The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Dec. 27, 2019
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Meng-Yang Chen, Hsinchu, TW;
Jung-Jen Li, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/30 (2013.01); H01L 33/0062 (2013.01); H01L 2933/0033 (2013.01);
Abstract
The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.