The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Nov. 23, 2022
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Henning Feick, Dresden, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
A photon avalanche diode includes: first, second, and third diodes formed in a semiconductor body, the second diode being a photodiode; a main cathode terminal connected to the cathode of the first diode; a main anode terminal connected to the anode of the third diode; an auxiliary cathode terminal connected to the cathode of the second and third diodes; and an auxiliary anode terminal connected to the anode of the first and second diodes. The main anode terminal is electrically connected to ground or a reference potential. The main cathode terminal is electrically connected to a voltage which causes a photocarrier multiplication region to form within the semiconductor body. The auxiliary anode terminal is electrically connected to ground or to a read-out circuit. The auxiliary cathode terminal is electrically connected to a constant bias voltage less than a voltage applied to the main cathode terminal.