The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Sep. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeho Ahn, Seoul, KR;

Jiwon Kim, Seoul, KR;

Sungmin Hwang, Hwaseong-si, KR;

Joonsung Lim, Seongnam-si, KR;

Sukkang Sung, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A nonvolatile memory device and a data storage system including the same are provided. The nonvolatile memory device includes: a first structure including at least one first memory plane; and a second structure bonded to the first structure and including at least one second memory plane, wherein the number of the at least one first memory plane included in the first structure is different from the number of the at least one second memory plane included in the second structure.


Find Patent Forward Citations

Quick Actions:

Ahn, Jaeho. (2024). Nonvolatile memory devices and data storage systems including the same (U.S. Patent No. 12057421). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12057421

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