The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Mar. 11, 2020
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Mitsuhiko Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/45 (2013.01); H01L 24/49 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/7802 (2013.01); H01L 2224/02181 (2013.01); H01L 2224/0219 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/03825 (2013.01); H01L 2224/03827 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/06505 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/49505 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/059 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device includes: a semiconductor substrate having a first main surface; an aluminum electrode having a first surface facing the first main surface and a second surface opposite to the first surface, the aluminum electrode being disposed on the semiconductor substrate; a passivation film that covers a peripheral edge of the second surface and that is provided with an opening from which a portion of the second surface is exposed; a copper film disposed on the second surface exposed from the opening so as to be separated from the passivation film; and a metal film disposed on the second surface exposed from between the passivation film and the copper film. The metal film is constituted of at least one selected from a group consisting of a nickel film, a tantalum film, a tantalum nitride film, a tungsten film, a titanium film, and a titanium nitride film.


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