The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
May. 12, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Amir Kajbafvala, Chandler, AZ (US);
Peter Westrom, Payson, AZ (US);
Joe Margetis, Gilbert, AZ (US);
Xin Sun, Tempe, AZ (US);
Caleb Miskin, Mesa, AZ (US);
Yen Lin Leow, Grenoble, FR;
Yanfu Lu, Phoenix, AZ (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/08 (2013.01); C23C 16/45512 (2013.01); C23C 16/52 (2013.01); C30B 25/165 (2013.01); C30B 25/186 (2013.01); C30B 29/52 (2013.01); H01L 21/02532 (2013.01);
Abstract
A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.