The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Jun. 23, 2022
Sandisk Technologies Llc, Addison, TX (US);
Wei Zhao, Fremont, CA (US);
Dong-II Moon, San Jose, CA (US);
Erika Penzo, San Jose, CA (US);
Henry Chin, Fremont, CA (US);
SanDisk Technologies LLC, Addison, TX (US);
Abstract
The memory device includes a plurality of memory blocks that can individually operate in either a multi-bit per memory cell mode or a single-bit per memory cell mode. Certain voltage parameters during programming and reading are shared between these two operating modes, and certain voltage parameters are unique to each operating mode. One unique voltage parameter is a pass voltage VREADK that is applied to word lines adjacent a selected word line being read. Another unique voltage parameter is a VSGD voltage that is applied to a select gate drain transistor during programming. Yet another unique voltage parameter is an inhibit voltage that is applied to a bit line coupled with a memory cell being inhibited from programming while other memory cells are programmed.