The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Nov. 22, 2022
Applicant:

Alpha and Omega Semiconductor International Lp, Toronto, CA;

Inventor:

Gilbert S. Z. Lee, Seongnam-si, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 15/04 (2006.01); G01R 19/165 (2006.01); G01R 31/26 (2020.01);
U.S. Cl.
CPC ...
G01R 15/04 (2013.01); G01R 19/16519 (2013.01); G01R 31/2628 (2013.01);
Abstract

A power MOSFET drain-source on resistance (Rdson) compensation device comprises circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, a temperature dependent information and a gate-source voltage dependent information. The circuitry includes control logic and a first linear discrete voltage divider, wherein the first linear discrete voltage divider is configured to output a compensated voltage based on an at least one compensating control signal from the control logic that is based on at least one of the temperature dependent information or gate-source voltage dependent information.


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