The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Jun. 10, 2020
Byunggeun Ahn, Busan, KR;
Jae Hak Lee, Seoul, KR;
Hyung Soo Ahn, Busan, KR;
Jae Hak Lee, Seoul, KR;
Other;
Abstract
An apparatus for manufacturing hexagonal Si crystal includes: a reaction tube; a mixed source part placed on one side in the reaction tube, for receiving mixed source of silicon, aluminum, and gallium which are in a solid state; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the mixed source part; a substrate mounting part placed on the other side in the reaction tube, for mounting a first substrate, wherein the first substrate is disposed such that a crystal growth surface of the first substrate faces downwards; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the substrate mounting part; and a heater for heating the reaction tube. The heater heats the reaction tube in a temperature range of 1100-1300° C.