The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jun. 14, 2021
Kioxia Corporation, Tokyo, JP;
Takayuki Kashima, Yokkaichi Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device includes: a first stack including a first polycrystalline semiconductor layer having a first average crystal grain size, a second polycrystalline semiconductor layer having a second average crystal grain size smaller than the first average crystal grain size, an intermediate layer between the first and second polycrystalline semiconductor layers, and a third polycrystalline semiconductor layer provided on the second polycrystalline semiconductor layer and having a third average crystal grain size smaller than the first average crystal grain size; a second stack provided above the first stack and having conductive layers and insulation layers, each conductive layer and each insulation layer being alternately stacked and extending in a first direction; a semiconductor layer through the second stack, and on the third polycrystalline semiconductor layer; and a memory layer through the second stack, and between the semiconductor layer and the conductive layer in the first direction.