The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Dec. 14, 2021
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Daisuke Yamaguchi, Kanagawa, JP;
Shinobu Kawaguchi, Kanagawa, JP;
Yoshihiro Komatsu, Kanagawa, JP;
Toshikazu Ohno, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Tomosato Kanagawa, Kanagawa, JP;
Abstract
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.