The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

May. 31, 2022
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Keishi Inoue, Kumamoto, JP;

Kenju Nishikido, Kumamoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H04N 25/70 (2023.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 27/14625 (2013.01); H01L 27/14634 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H04N 25/70 (2023.01); H04N 25/79 (2023.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08147 (2013.01);
Abstract

The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.


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