The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Apr. 26, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hiroki Date, Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/32 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01);
U.S. Cl.
CPC ...
G11C 7/22 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/28 (2013.01); G11C 16/32 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02);
Abstract

In a semiconductor memory device, in a write operation performed to a memory cell transistor, a first voltage is applied to a first word line and a second voltage lower than the first voltage is applied to a second word line. When a stop command is received during the write operation, a third voltage lower than the second voltage is applied to the first and second word lines, thereafter a fourth voltage higher than the third voltage is applied to a first selection line, thereon or thereafter a fifth voltage higher than the fourth voltage is applied to the first and second word lines, thereafter a sixth voltage lower than the fourth voltage is applied to the first selection line, and thereafter a seventh voltage is applied to the first and second word lines.


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