The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jun. 28, 2022
Western Digital Technologies, Inc., San Jose, CA (US);
Western Digital Technolologies, Inc., San Jose, CA (US);
Abstract
Memory cells are programmed to threshold voltage distributions that correspond to data states by applying a series of voltage pulses to a selected word line connected to a set of non-volatile memory cells selected for programming. Tighter threshold voltage distributions will result in fewer errors when reading the data at a later time. To create tighter threshold voltage distributions during programming, the system slows down the programming of memory cells as the memory cells approach their target threshold voltage by reducing the effective pulse width of the voltage pulses. The voltage pulses are divided into portions, with each portion corresponding to a subset of the pulse width or a subset of the time period that the voltage pulse is applied. Memory cells that are approaching their target threshold voltage will be slowed down by inhibiting those memory cells from programming during later-in-time portions of the voltage pulses.