The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Jun. 21, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yong Jae Lee, Seongnam-si, KR;

Jihun Byun, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

A variable resistance memory device includes active regions apart from each other, common bit line contacts in the active regions, first active source contacts on first active regions near one edge of each of the common bit line contacts, second active source contacts on second active regions near another edge of each of the common bit line contacts, word lines between the first active source contacts and the common bit line contacts and between the common bit line contacts and the second active source contacts, bit lines on the common bit line contacts, variable resistance layers connected to the second active source contacts, the word lines, and the bit lines, spin-orbit torque (SOT) layers connected to the first active source contacts on the variable resistance layers, the word lines, and the bit lines, source line contacts on the SOT layers, and source lines connected to the source line contacts.


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