The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Jul. 07, 2021
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Gerhard Klimeck, West Lafayette, IN (US);

Tillmann Kubis, West Lafayette, IN (US);

Junzhe Geng, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/20 (2020.01); G06F 30/367 (2020.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); G06F 111/10 (2020.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
G06F 30/20 (2020.01); G06F 30/367 (2020.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); G06F 2111/10 (2020.01); H01L 33/145 (2013.01);
Abstract

The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.


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