Thermocouple wafer calibration system and calibration method using the same

Abstract

The present disclosure relates to a thermocouple wafer calibration system including: a main body portion composed of a chamber forming a sealed space, and a support installed a lower edge of the chamber and supporting the chamber to be spaced apart from the ground; a thermocouple wafer composed of a plate installed to be horizontal inside the sealed space of the chamber, and a first thermocouple unit attached to a upper surface of the plate so as to form a plurality of first measurement contact points; a calibration portion provided with a second thermocouple unit penetrating the chamber in a space where the chamber spaced from the ground, then partially accommodated inside the sealed space, and calibrated to form a plurality of second measurement contact points in contact with a lower surface of the plate at a position corresponding to each of the first measurement contact points; a temperature measurement portion partially accommodated inside the sealed space of the chamber and measuring a temperature of the sealed space; a heating portion accommodated inside the sealed space of the chamber, allowing thermogenesis and being in thermal contact with the second thermocouple unit directly; a measurement portion connected to the first and second thermocouple units respectively, and measuring each thermal electromotive force for the first and second measurement contact points occurring when the first and second thermocouple units are in contact indirectly at both sides on the basis of the plate; and a temperature control portion calculating each temperature value for the first and second measurement contact points depending on values measured from the measurement portion, and, after comparing and analyzing the calculated temperature values and temperature values measured from the temperature measurement portion, allowing adjusting the temperature of the sealed space by controlling the heating portion based on the analysis result.