The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Jul. 21, 2021
Applicants:

Beihai Hkc Optoelectronics Technology Co., Ltd., Beihai, CN;

Hkc Corporation Limited, Shenzhen, CN;

Inventors:

Yuming Xia, Beihai, CN;

En-Tsung Cho, Beihai, CN;

Wei Li, Beihai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0281 (2013.01); C23C 16/18 (2013.01); C23C 16/26 (2013.01); C23C 16/4417 (2013.01); C23C 16/45553 (2013.01); H01L 21/76838 (2013.01); G02F 1/1368 (2013.01);
Abstract

The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template.


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