The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Sep. 29, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Seokcheon Baek, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); G11C 8/14 (2006.01); H01L 23/522 (2006.01); H01L 27/11565 (2017.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 8/14 (2013.01); H01L 23/5226 (2013.01); H01L 29/4234 (2013.01); H01L 29/7926 (2013.01); H10B 43/10 (2023.02);
Abstract

A vertical memory device includes a plurality of memory blocks having a plurality of horizontal gate electrodes spaced apart from each other in a first direction and extending in a second direction. A plurality of vertical channels extends through the horizontal gate electrodes in the first direction. A plurality of charge storage structures are disposed between the vertical channels and the horizontal gate electrodes. A conductive path extends in a third direction. The plurality of memory blocks are arranged in the third direction and are divided from each other by a first division pattern that extends in the second direction. The plurality of horizontal gate electrodes at each level are connected to the conductive path at a first lateral side in the second direction to form a shared memory block.


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