The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Jan. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kiseok Lee, Hwaseong-si, KR;

Hui-Jung Kim, Seongnam-si, KR;

Min Hee Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H01L 29/78693 (2013.01); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor memory device including: a stack structure including a plurality of layers that are vertically stacked on a substrate, each of the plurality of layers including a word line, a channel layer, and a data storage element electrically connected to the channel layer; and a bit line that vertically extends on one side of the stack structure, wherein the word line includes: a first conductive line that extends in a first direction; and a gate electrode that protrudes in a second direction from the first conductive line, the second direction intersecting the first direction, wherein the channel layer is on the gate electrode, and wherein the bit line includes a connection part electrically connected to the channel layer.


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