The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Apr. 29, 2022
Applicant:

Lumentum Japan, Inc., Sagamihara, JP;

Inventors:

Atsushi Nakamura, Nagano, JP;

Shigetaka Hamada, Kanagawa, JP;

Ryosuke Nakajima, Kanagawa, JP;

Ryu Washino, Kanagawa, JP;

Shoko Yokokawa, Kanagawa, JP;

Kouji Nakahara, Tokyo, JP;

Assignee:

Lumentum Japan, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/024 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01);
U.S. Cl.
CPC ...
H01S 5/024 (2013.01); H01S 5/04256 (2019.08); H01S 5/2205 (2013.01); H01S 5/223 (2013.01); H01S 5/2231 (2013.01); H01S 5/2232 (2013.01); H01S 5/22 (2013.01); H01S 5/2214 (2013.01);
Abstract

An optical semiconductor device includes a substrate, a semiconductor multilayer which is formed on the substrate, and includes an optical functional layer, an insulating film formed on the semiconductor multilayer, and an electrode formed on a part of the insulating film. The insulating film covers the semiconductor multilayer except for a region in which the semiconductor multilayer and the electrode are electrically connected to each other. At least a part of a region of the insulating film that is overlapped with the electrode is thinner than a region of the insulating film that is not overlapped with the electrode.


Find Patent Forward Citations

Loading…