The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Dec. 18, 2019
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Martin Behringer, Regensburg, DE;

Alexander Tonkikh, Wenzenbach, DE;

Tansen Varghese, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/24 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01L 25/0753 (2013.01);
Abstract

An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.


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