The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
May. 26, 2021
Melexis Bulgaria Ltd, Sofia, BG;
Appo Van Der Wiel, Tessenderlo, BE;
Jeroen Didden, Tessenderlo, BE;
MELEXIS BULGARIA LTD, Sofia, BG;
Abstract
A semiconductor device includes a first diffusion region of a first type with embedded therein, a second and a third diffusion region of a second type different from the first type. The second and third diffusion regions are more doped than the first region. The second and third diffusion regions are each connected to a respective contact. A dielectric layer covers at least an edge of the second and third diffusion regions, and the region in between the second and third diffusion regions. A piezoelectric layer is disposed on, over, adjacent to or in contact with the dielectric layer. A first structure is in a first soft ferromagnetic material and is arranged to perform mechanical stress on the piezoelectric layer in response to a magnetic field.