The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Oct. 18, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Fee Li Lie, Albany, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Junli Wang, Slingerlands, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 16/23 (2019.01); G06F 9/455 (2018.01); G06F 11/14 (2006.01); G06F 16/13 (2019.01); G06F 16/16 (2019.01); G06F 16/188 (2019.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); G06F 9/45558 (2013.01); G06F 11/1469 (2013.01); G06F 16/13 (2019.01); G06F 16/168 (2019.01); G06F 16/188 (2019.01); G06F 16/23 (2019.01); H01L 21/764 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/66666 (2013.01); G06F 2009/45583 (2013.01); G06F 11/1458 (2013.01); G06F 11/1461 (2013.01); G06F 2201/815 (2013.01); G06F 2201/84 (2013.01);
Abstract
A semiconductor device including a fin structure formed on a first semiconductor region, and a first semiconductor structure controlling the first semiconductor region, the first semiconductor structure formed on a substrate and spaced apart from the first semiconductor region including the fin structure.