The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
May. 20, 2022
Wuxi China Resources Huajing Microelectronics Co., Ltd., Jiangsu, CN;
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD., Jiangsu, CN;
Abstract
A vertical semiconductor structure with an integrated sampling structure and a method for manufacturing the same; the vertical semiconductor structure includes a vertical-semiconductor-structure unit cell, a sampling unit cell, a control electrode, a first electrode, a second electrode, and a sampling electrode. The sampling electrode performs real-time sampling of a voltage difference between the first electrode and the second electrode; a PN junction is formed between a first/second P-type diffusion region and a second N-type base region, which forms a potential barrier blocking electron emission from the sampling electrode. Therefore, a voltage signal of the sampling electrode is input into a protection circuit, which detects whether the vertical-semiconductor-structure unit cell is desaturated when it determines that the unit cell is in the open state. Second, a sampling resistor is connected between the sampling electrode and the first electrode to ensure the stable operation of the sampling unit cell.