The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Dec. 25, 2020
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Danfeng Mao, Zhuhai, CN;
King Yuen Wong, Zhuhai, CN;
Jinhan Zhang, Zhuhai, CN;
Xiaoyan Zhang, Zhuhai, CN;
Wei Wang, Zhuhai, CN;
Jianjian Sheng, Zhuhai, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a passivation layer covering the first gate conductor, and a second gate conductor disposed on the passivation layer and on a second region of the second nitride semiconductor layer, wherein the first region is laterally spaced apart from the second region.