The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jan. 18, 2022
Seiko Epson Corporation, Tokyo, JP;
Masuhide Ikeda, Matsumoto, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
In a static electricity protection circuit, an N+ embedded region is provided, extending over an upper surface of a P-type P semiconductor substrate. One N−-semiconductor region, another N−-semiconductor region, and an N− common impurity region are provided in an upward direction from the N+ embedded region. The one N−-semiconductor region and the other N−-semiconductor region are coupled together via the N− common impurity region. A P− impurity region is provided in the upward direction from the one N−-semiconductor region. Another P− impurity region is provided in the upward direction from the other N−-semiconductor region. A diode formed by the one P− impurity region and the one N−-semiconductor region and a diode formed by the other P− impurity region and the other N−-semiconductor region are coupled in opposite directions to each other via the N− common impurity region.