The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Feb. 26, 2019
Applicant:

National University of Singapore, Singapore, SG;

Inventors:

Wei Chen, Singapore, SG;

Cheng Han, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); C23C 14/24 (2006.01); C23C 14/52 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); G02B 21/00 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); C23C 14/243 (2013.01); C23C 14/52 (2013.01); H01L 29/0665 (2013.01); H01L 29/66136 (2013.01); G02B 21/0016 (2013.01);
Abstract

A system and method for in-situ characterization of functional devices. The system comprises a vacuum chamber; a pump system coupled to the vacuum chamber for evacuation the vacuum chamber to near ultra high vacuum pressures of about 10mbar or lower; a sample holder for a functional device based on nanostructured materials disposed inside the vacuum chamber and configured to provide electrical connection to the functional device for measuring electrical properties of the functional device; and a source system for exposing a surface/interface of the functional device to a modification species; whereby the system is configured to measure the electrical properties of the functional device in-situ upon the exposure to the modification species.


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