The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Oct. 14, 2021
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventor:

Tae Young Ham, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); C04B 35/468 (2006.01); H01G 4/012 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); C04B 35/4682 (2013.01); H01G 4/30 (2013.01); C04B 2235/3236 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/781 (2013.01); C04B 2235/783 (2013.01); C04B 2235/785 (2013.01); C04B 2235/95 (2013.01); H01G 4/012 (2013.01);
Abstract

A multilayer electronic component includes a body including a plurality of dielectric layers, wherein, wherein a central portion of the capacitance formation portion is Aa, a boundary portion of the capacitance formation portion, adjacent to the cover portions, is Ab, a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Aa, is D50a, and a dielectric grain size corresponding to the top 50% of dielectric grains, in order of enlargement, from the smallest grain size, among a plurality of dielectric grains included in Ab, is D50b, D50a satisfies 190 nm or less and D50b satisfies 120 nm or greater.


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