Silicon test structures for separate measurement of nmos and pmos transistor delays

Abstract

Silicon test structures are described that enable separate measurement of n-channel metal-oxide semiconductor (NMOS) and p-channel metal-oxide semiconductor (PMOS) transistor delays. NMOS and PMOS specific non-inverting stages may be used to construct a multi-stage ring oscillator. Each of the non-inverting stages generates either a rising or falling primary transition that is determined by either NMOS or PMOS transistors, respectively. The opposing transition for a particular non-inverting stage is triggered by propagation of the primary transition to a subsequent non-inverting stage (producing a 'reset' pulse). A frequency of the ring oscillator is determined by the primary transition and one transistor type (NMOS or PMOS). Specifically, the frequency is determined by the propagation delay of the primary transition through the entire ring oscillator.