The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Feb. 24, 2021
Applicant:

Us Synthetic Corporation, Orem, UT (US);

Inventors:

Kenneth E. Bertagnolli, Riverton, UT (US);

David P. Miess, Highland, UT (US);

Jiang Qian, Cedar Hills, UT (US);

Jason K. Wiggins, Draper, UT (US);

Michael A. Vail, Genola, UT (US);

Debkumar Mukhopadhyay, Sandy, UT (US);

Assignee:

US SYNTHETIC CORPORATION, Orem, UT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
E21B 10/567 (2006.01); B22F 7/08 (2006.01); C22C 26/00 (2006.01); E21B 10/36 (2006.01); E21B 10/46 (2006.01); E21B 10/55 (2006.01); E21B 10/573 (2006.01); B24D 18/00 (2006.01); F16C 17/02 (2006.01); F16C 17/04 (2006.01); F16C 17/10 (2006.01); F16C 33/04 (2006.01); F16C 33/26 (2006.01);
U.S. Cl.
CPC ...
E21B 10/567 (2013.01); B22F 7/08 (2013.01); C22C 26/00 (2013.01); E21B 10/36 (2013.01); E21B 10/46 (2013.01); E21B 10/55 (2013.01); E21B 10/5735 (2013.01); B22F 2998/00 (2013.01); B24D 18/00 (2013.01); F16C 17/02 (2013.01); F16C 17/04 (2013.01); F16C 17/102 (2013.01); F16C 33/043 (2013.01); F16C 33/26 (2013.01); F16C 2352/00 (2013.01); Y10T 428/24612 (2015.01); Y10T 428/24996 (2015.04); Y10T 428/249967 (2015.04);
Abstract

In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.


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