The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Sep. 06, 2018
Sharp Kabushiki Kaisha, Sakai, JP;
Takao Saitoh, Sakai, JP;
Masahiko Miwa, Sakai, JP;
Yohsuke Kanzaki, Sakai, JP;
Yi Sun, Sakai, JP;
Masaki Yamanaka, Sakai, JP;
Seiji Kaneko, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.