The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Jan. 22, 2021
Applicant:

The Research Foundation for the State University of New York, Albany, NY (US);

Inventors:

James Scheuermann, Katonah, NY (US);

Wei Zhao, East Setauket, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); G01T 1/24 (2006.01); H01L 29/00 (2006.01); H10K 30/10 (2023.01); H10K 39/32 (2023.01); H10K 39/36 (2023.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H10K 30/10 (2023.02); G01T 1/241 (2013.01); G01T 1/247 (2013.01); H10K 39/32 (2023.02); H10K 39/36 (2023.02); H01L 2031/0344 (2013.01);
Abstract

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.


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