The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Jan. 06, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Sota Matsumoto, Yokkaichi, JP;

Takahito Nishimura, Kuwana, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 99/00 (2023.01); H01L 21/308 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H10B 41/20 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01);
U.S. Cl.
CPC ...
H10B 99/00 (2023.02); H01L 21/308 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H10B 41/20 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02);
Abstract

A semiconductor storage device according to an embodiment includes: a stacked body in which a plurality of conductive layers are stacked via an insulating layer and which has a memory region in which a plurality of memory cells are disposed and a staircase region in which end portions of the plurality of conductive layers form a staircase shape. A first region of the staircase region includes a first sub-staircase portion ascending in a first direction toward the memory portion, and a second sub-staircase portion disposed side by side with the first sub-staircase portion in a second direction opposite to the first direction from the first sub-staircase portion and ascending in the second direction.


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