The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
May. 19, 2020
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/00 (2023.02); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01);
Abstract
A semiconductor device in which temperature dependence is reduced is provided. A switched capacitor is formed using a second transistor, a third transistor, and a second capacitor. Semiconductor layers of the second transistor and the third transistor that include an oxide can reduce temperature dependence. An AC signal supplied to the gates of the second transistor and the third transistor is converted into a DC voltage through the switched capacitor. Note that the level of the DC voltage is adjusted by the levels of the voltages supplied to the back gates of the second transistor and the third transistor.