The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Dec. 10, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Hiroki Inoue, Atsugi, JP;
Munehiro Kozuma, Atsugi, JP;
Takeshi Aoki, Ebina, JP;
Shuji Fukai, Atsugi, JP;
Fumika Akasawa, Sagamihara, JP;
Shintaro Harada, Kawasaki, JP;
Sho Nagao, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device using unipolar transistors, in which high and low levels are expressed using high and low power supply potentials, is provided. The semiconductor device includes four transistors, two capacitors, two wirings, two input terminals, and an output terminal. A source or a drain of the first transistor and a source or a drain of the fourth transistor are electrically connected to the first wiring. A gate of the fourth transistor is electrically connected to the first input terminal, and a gate of the second transistor is electrically connected to the second input terminal. A source or a drain of the second transistor and a source or a drain of the third transistor are electrically connected to the second wiring. The first transistor, the second transistor, and the two capacitors are electrically connected to the output terminal.