The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Nov. 21, 2022
Applicant:
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); H01S 5/34 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2031 (2013.01); H01S 5/2077 (2013.01); H01S 5/321 (2013.01); H01S 5/32358 (2013.01); H01S 5/3428 (2013.01); H01L 31/03765 (2013.01); H01L 31/204 (2013.01);
Abstract
An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xof proportion of tin less than x, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin x, and vertical structures having an average value xof proportion of tin greater than x, thus forming regions for emitting or for receiving infrared radiation.