The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Dec. 20, 2022
Applicant:
Excelitas Technologies Corp., Waltham, MA (US);
Inventors:
Bartley C. Johnson, North Andover, MA (US);
Mark E. Kuznetsov, Lexington, MA (US);
Peter S. Whitney, Bedford, MA (US);
Assignee:
Excelitas Technologies Corp., Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/04 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18366 (2013.01); H01S 5/041 (2013.01); H01S 5/18369 (2013.01); H01S 5/34306 (2013.01);
Abstract
A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.