The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Oct. 29, 2021
Applicant:

Sionyx, Llc, Beverly, MA (US);

Inventors:

James E. Carey, Ann Arbor, MI (US);

Drake Miller, Tigard, OR (US);

Assignee:

SIONYX, LLC, Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/028 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02024 (2013.01); H01L 27/1446 (2013.01); H01L 27/14629 (2013.01); H01L 27/14643 (2013.01); H01L 31/02363 (2013.01); H01L 31/028 (2013.01); H01L 31/103 (2013.01); Y02E 10/50 (2013.01);
Abstract

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.


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