The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Sep. 14, 2022
National Research Council of Canada, Ottawa, CA;
NATIONAL RESEARCH COUNCIL OF CANADA, Ottawa, CA;
Abstract
An ohmic contact includes a first semiconductor layer a second semiconductor layer, and a heterointerface between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a two-dimensional electron sheet region in which a two-dimensional electron sheet is formed. The ohmic contact further includes a metal terminal covering the first semiconductor layer and filling a plurality of direct access pathways that provide direct lateral contact with the two-dimensional electron sheet region. The semiconductor device is fabricated by providing the semiconductor layers, etching the direct access pathways, and depositing metal material to fill the direct access pathways and cover the semiconductor layers. The ohmic contact may be part of a high-electron-mobility transistor that achieves low contact resistance with either no annealing at all (as-deposited metal), or at an anneal temperature that is much lower than industry-standard anneal temperatures to achieve sufficiently low contact resistance.