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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12040366 B1

PDFFull Text
Date of Patent:
Jul. 16, 2024

Filed:

Jun. 08, 2021

Fabricating sub-micron contacts to buried well devices

Applicant:

The Boeing Company, Chicago, IL (US);

Inventors:

Kangmu Min Lee, Playa Vista, CA (US);

Maxwell Daehan Choi, Thousand Oaks, CA (US);

Jeffrey Alden Wright, Thousand Oaks, CA (US);

Wonill Ha, Thousand Oaks, CA (US);

Clayton Jackson, Thousand Oaks, CA (US);

Michael Pemberton Jura, Santa Monica, CA (US);

Adele Schmitz, Thousand Oaks, CA (US);

James Chappell, Woodland Hills, CA (US);

Assignee:

The Boeing Company, Chicago, IL (US);

Attorney:

Yee & Associates, P.C.

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/266 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/0465 (2013.01); H01L 21/2652 (2013.01); H01L 21/26553 (2013.01); H01L 21/76232 (2013.01); H01L 29/401 (2013.01); H01L 21/266 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01);
Abstract

A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.

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