The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Nov. 23, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Keiji Okumura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes n-type drift layer, n-type first current spreading layer on top surface of the drift layer, p-type base region on top surface of the first current spreading layer, p-type gate-bottom protection region inside the first current spreading layer, p-type base-bottom embedded region separated from the gate-bottom protection region and in contact with bottom surface of the base region, n-type second current spreading layer having side surface opposed to the gate-bottom protection region and in contact with side surface of the base-bottom embedded region, and insulated gate electrode structure inside trench penetrating the base region to reach the gate-bottom protection region. The impurity concentration ratio of the gate-bottom protection region to the first current spreading layer is greater than the impurity concentration ratio of the base-bottom embedded region to the second current spreading layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile