The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Mar. 03, 2021
Applicant:

Guangdong Zhineng Technology Co., Ltd., Guangdong, CN;

Inventor:

Zilan Li, Guangzhou, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/8252 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/8252 (2013.01); H01L 27/0922 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/7788 (2013.01);
Abstract

A semiconductor device and a method of fabricating the same are proposed. The semiconductor device includes a plurality of hole-channel Group III nitride devices and a plurality of electron-channel Group III nitride devices. In the above, the hole-channel Group III nitride devices and the electron-channel Group III nitride devices are arranged in correspondence with each other. The electron-channel Group III nitride device has a fin-shaped channel, and a two-dimensional hole gas and/or a two-dimensional electron gas can be simultaneously formed at an interface between a compound semiconductor layer and a nitride semiconductor layer.


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