The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Sep. 14, 2022
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventor:

Francois Roy, Seyssins, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/53 (2023.01); H04N 25/621 (2023.01); H04N 25/705 (2023.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/1463 (2013.01); H04N 25/53 (2023.01); H04N 25/621 (2023.01); H04N 25/705 (2023.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01);
Abstract

A sensor includes pixels supported by a substrate doped with a first conductivity type. Each pixel includes a portion of the substrate delimited by a vertical insulation structure with an image sensing assembly and a depth sensing assembly. The image sensing assembly includes a first region of the substrate more heavily doped with the first conductivity type and a first vertical transfer gate completely laterally surrounding the first region. Each of the depth sensing assemblies includes a second region of the substrate more heavily doped with the first conductivity type a second vertical transfer gate opposite a corresponding portion of the first vertical transfer gate. The second region is arranged between the second vertical transfer gate and the corresponding portion of the first vertical transfer gate.


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