The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Jun. 01, 2022
Qualcomm Incorporated, San Diego, CA (US);
Je-Hsiung Lan, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Kai Liu, Phoenix, AZ (US);
Nosun Park, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.