The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Oct. 06, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Satoshi Wakatsuki, Yokkaichi, JP;
Tomohisa Iino, Yokkaichi, JP;
Naomi Fukumaki, Yokkaichi, JP;
Misuzu Sato, Yokkaichi, JP;
Masakatsu Takeuchi, Obu, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76865 (2013.01); H01L 21/76843 (2013.01);
Abstract
A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.