The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Oct. 15, 2021
Applicant:

Tencent Technology (Shenzhen) Company Limited, Guangdong, CN;

Inventors:

Wenlong Zhang, Guangdong, CN;

Yarui Zheng, Guangdong, CN;

Shengyu Zhang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0272 (2013.01); G03F 7/094 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2022 (2013.01); G03F 7/38 (2013.01);
Abstract

Embodiments of this disclosure provide a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof According to the method for manufacturing a photoresist structure, a single photoresist is used, a second photoresist layer having an undercut can be obtained by only one development process using a single developing solution, and the size of the undercut can be controlled by the development time, thereby solving the problems such as difficulty in lift-off caused by adhesion of the deposited material to the sidewall of the photoresist structure in traditional lift-off processes.


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