The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Jan. 11, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
David Kohen, Phoenix, AZ (US);
Harald Benjamin Profijt, Rosemalen, NL;
Andrew Kretzschmar, Austin, TX (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/0245 (2013.01); H01L 21/02164 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/0262 (2013.01); H01L 29/165 (2013.01); H10B 43/27 (2023.02); H01L 29/1054 (2013.01);
Abstract
A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (SiGe) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (SiGe) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (SiGe) seed layer are also disclosed.