logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12040155 B1

PDFFull Text
Date of Patent:
Jul. 16, 2024

Filed:

Sep. 10, 2021

Method of manufacturing semiconductor device and ion beam irradiation apparatus

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Junichi Hashimoto, Yokkaichi, JP;

Toshiyuki Sasaki, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Binh X Tran

Assistant Examiner:

Bradford M Gates

Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/48 (2006.01); C23C 16/52 (2006.01); H01J 37/147 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 21/768 (2006.01); H10B 43/50 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01J 37/1474 (2013.01); C23C 16/047 (2013.01); C23C 16/402 (2013.01); C23C 16/486 (2013.01); C23C 16/52 (2013.01); H01J 37/3233 (2013.01); H01L 21/02164 (2013.01); H01L 21/02266 (2013.01); H01L 21/2633 (2013.01); H01L 21/76819 (2013.01); H10B 43/50 (2023.02); H01J 2237/334 (2013.01); H10B 43/27 (2023.02);
Abstract

A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

Find Patent Forward Citations

Hashimoto, Junichi. (2024). Method of manufacturing semiconductor device and ion beam irradiation apparatus (U.S. Patent No. 12040155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12040155

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…